TOPMW has officially launched a new C-band high-power pulsed power amplifier unit: TPPAU10025
Designed for high-performance RF and microwave systems operating across the 6.5 GHz to 7.0 GHz frequency range, this equipment integrates advanced power amplification technology, comprehensive system-level protection, and intelligent local and remote control capabilities.
System Architecture & Power Design
The power amplifier unit is built upon a modular power synthesis architecture. The core amplification stage consists of four individual power amplifier modules, each engineered to deliver an output power exceeding 1000 W. These modules are combined through a two-stage power combining network to form the complete high-power unit.
*Design Capability & Power Margin: The internal hardware architecture provides a total design output capability exceeding 4000 W (>66 dBm), ensuring significant power reserve during operation.
*Guaranteed Output Power: Across the entire 6.5 GHz to 7.0 GHz operating band, the unit guarantees a minimum output power of 4000 W (≥66 dBm).
*Gain & Flatness: The unit provides a small-signal and power gain of ≥55 dB, with a measured in-band output power flatness within ±0.2 dB (well within the specification requirement of < ±1 dB)
Pulse Characteristics & Spectral Performance
Engineered specifically for pulsed-mode applications, TPPAU10025 delivers precise pulse dynamics and high spectral purity:
*Pulse Parameters: Supports pulse widths up to 100 µs and a maximum duty cycle of 10% (with a typical operational duty cycle of 5%).
*Fast Switching Response: Under full pulsed testing, the unit demonstrates a measured rise time of 16 ns (specification requirement: ≤100 ns) and a fall time of 27.5 ns (specification requirement: ≤150 ns).
*Harmonic & Spurious Rejection: The unit features exceptional spectral cleanliness. Tested at maximum output power, second harmonic rejection reaches -66.92 dBc, third harmonic rejection reaches -61.23 dBc, and non-harmonic in-band spurious signals are suppressed to -73.72 dBc.
*Impedance Matching: The input Voltage Standing Wave Ratio (VSWR) is maintained at <2.0, ensuring optimal power transfer from the driver source.
System Protection & Fault Diagnostics
To ensure operational safety and system longevity under high-power pulse conditions, the unit incorporates an array of built-in hardware and software protection mechanisms:
*Pulse Over-Limit Protection: Automatic protection against over-pulse width and over-duty cycle conditions to prevent thermal overloading of the internal amplifier modules.
*RF Overdrive Protection: Safeguards internal stages against excessive RF input power.
*Thermal & Electrical Safety: Integrated sensors constantly monitor system conditions, providing immediate protection against over-temperature, over-voltage, and over-current conditions.
Mechanical Enclosure & User Interface
The amplifier unit is designed for standard industrial and laboratory rack integration:
*Chassis & Cooling:Housed in a standard 19-inch 6U rack-mountable chassis equipped with an adaptive forced air-cooling system to efficiently dissipate heat under high pulse duty cycles.
*Local Control Panel: The front panel incorporates a high-resolution touchscreen display, providing real-time monitoring of key operational parameters, including operating voltage, current, internal temperature, pulse parameters, and output power levels.
*Remote Communication: Includes built-in Ethernet (LAN) and RS-422 communication interfaces, allowing full remote monitoring, status telemetry, and automated control via an external host computer system.
Product Gallery & Test Environment
Below are physical photographs of the C-band pulsed power amplifier unit, highlighting the complete equipment enclosure, front and rear panel interface configurations, and the laboratory test bench layout:
Designed for high-performance RF and microwave systems operating across the 6.5 GHz to 7.0 GHz frequency range, this equipment integrates advanced power amplification technology, comprehensive system-level protection, and intelligent local and remote control capabilities.
System Architecture & Power Design
The power amplifier unit is built upon a modular power synthesis architecture. The core amplification stage consists of four individual power amplifier modules, each engineered to deliver an output power exceeding 1000 W. These modules are combined through a two-stage power combining network to form the complete high-power unit.
*Design Capability & Power Margin: The internal hardware architecture provides a total design output capability exceeding 4000 W (>66 dBm), ensuring significant power reserve during operation.
*Guaranteed Output Power: Across the entire 6.5 GHz to 7.0 GHz operating band, the unit guarantees a minimum output power of 4000 W (≥66 dBm).
*Gain & Flatness: The unit provides a small-signal and power gain of ≥55 dB, with a measured in-band output power flatness within ±0.2 dB (well within the specification requirement of < ±1 dB)
Pulse Characteristics & Spectral Performance
Engineered specifically for pulsed-mode applications, TPPAU10025 delivers precise pulse dynamics and high spectral purity:
*Pulse Parameters: Supports pulse widths up to 100 µs and a maximum duty cycle of 10% (with a typical operational duty cycle of 5%).
*Fast Switching Response: Under full pulsed testing, the unit demonstrates a measured rise time of 16 ns (specification requirement: ≤100 ns) and a fall time of 27.5 ns (specification requirement: ≤150 ns).
*Harmonic & Spurious Rejection: The unit features exceptional spectral cleanliness. Tested at maximum output power, second harmonic rejection reaches -66.92 dBc, third harmonic rejection reaches -61.23 dBc, and non-harmonic in-band spurious signals are suppressed to -73.72 dBc.
*Impedance Matching: The input Voltage Standing Wave Ratio (VSWR) is maintained at <2.0, ensuring optimal power transfer from the driver source.
System Protection & Fault Diagnostics
To ensure operational safety and system longevity under high-power pulse conditions, the unit incorporates an array of built-in hardware and software protection mechanisms:
*Pulse Over-Limit Protection: Automatic protection against over-pulse width and over-duty cycle conditions to prevent thermal overloading of the internal amplifier modules.
*RF Overdrive Protection: Safeguards internal stages against excessive RF input power.
*Thermal & Electrical Safety: Integrated sensors constantly monitor system conditions, providing immediate protection against over-temperature, over-voltage, and over-current conditions.
Mechanical Enclosure & User Interface
The amplifier unit is designed for standard industrial and laboratory rack integration:
*Chassis & Cooling:Housed in a standard 19-inch 6U rack-mountable chassis equipped with an adaptive forced air-cooling system to efficiently dissipate heat under high pulse duty cycles.
*Local Control Panel: The front panel incorporates a high-resolution touchscreen display, providing real-time monitoring of key operational parameters, including operating voltage, current, internal temperature, pulse parameters, and output power levels.
*Remote Communication: Includes built-in Ethernet (LAN) and RS-422 communication interfaces, allowing full remote monitoring, status telemetry, and automated control via an external host computer system.
Product Gallery & Test Environment
Below are physical photographs of the C-band pulsed power amplifier unit, highlighting the complete equipment enclosure, front and rear panel interface configurations, and the laboratory test bench layout:
